3300V HiPak modules for high-temperature applications

High voltage IGBT modules are widely used in high power applications, such as traction and large drives. These applications demand high reliability modules and power devices with improved electrical characteristics in terms of reduced losses, increased ruggedness and good controllability for an increased temperature range. The previous SPT+ 3.3kV module rated at 1500A offered superior static and dynamic electrical properties [1]; however it was designed for 125°C operation. In this paper we present the newly developed IGBT and diode chip-set and the HiPak package for extending the operating temperature range towards 150°C. This step has been achieved by improving the design of IGBT and the free-wheeling diode on the power semiconductor device side. The package has been upgraded with low-resistance, high-current terminals [2]. Fig. 1 below shows the new module and the associated losses at 125°C for reference.